In this study, the Schottky diodes based on an interfacial layer of Sr-W thin film were fabricated. Thin films were coated on glass and silicon substrates by low-cost jet nebulizer spray pyrolysis (JNSP) coating technique with optimized substrate temperatures 500 degrees C. Structural, surface morphology, optical, and electrical characteristics of Sr-W thin film were investigated. In particular, the I-V characteristics of Cu/Sr-W/n-Si diodes in dark and light excitations were analysed. The maximum barrier height (phi b) for the diode fabricated 6 wt% tungsten under xenon lamp light irradiation was observed at 0.83 eV. Also, near ideal ideality factor (n) of the diode parameters, it was found at highest 6 wt% tungsten. The results show that diodes are more appropriate for the improvement of good quality photodiodes as well as photodetector applications.