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Synthesis of new Si-9 material with a direct bandgap and its unique physical properties TEXT SIZE: A A A
Even though economic advantages of silicon still keep it as the dominant material for the solar cell industry in the near future, crystal silicon in the diamond structure (d-Si) is an indirect bandgap semiconductor which prevents to consider it as a next-generation platform for optical material technologies. Here, we report the formation of a new allotrope of silicon on surface, Si-9, using a novel two-step synthesis methodology. First, a film of amorphous silicon was produced by using pulsed laser deposition method, and second, new Si-9 was synthesized under irradiation of coherent electron beam on the amorphous Si film. It is important that the structure of Si9, forming six-membered sp3 silicon rings and involving 9 silicon atoms in one unit, possesses a direct bandgap near 1.59 eV, around which we have measured the emission peak in photoluminescence spectra on the pure Si-9. It is discovered that Si-9 can be easily doped as both p- and n-type on surface, where boron and nitrogen are demonstrated as the most promising elements for the p-type and n-type doping in Si-9, respectively, due to their low formation energies and reductions in the band gap. These properties suggest great potential in constructing a novel Si-9-based p-n junction which is highly desired for future industrial application of optoelectronic technologies and photovoltaic devices.

Publication name

 MATERIALS RESEARCH EXPRESS, 6 (10):10.1088/2053-1591/ab390e OCT 2019


 Huang, Wei-Qi; Huang, Zhong-Mei; Liu, Shi-Rong; Peng, Hong-Yan

Corresponding author(s) 

 HUANG Weiqi 
 Hainan Normal Univ, Dept Phys, Haikou 571158, Hainan, Peoples R China.

Author(s) from IGCAS   LIU Shirong

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