Home | Contact Us | Sitemap | 中文 | CAS | Director's Email
 
Location:Home > Papers > Recent Papers
Open spin levels effect in the localized states on nanosilicon doped with oxygen under the magnetic moment of metal atoms TEXT SIZE: A A A
Magnetism in a non-magnetic material by manipulating its structure at the nanoscale is created, where many structural impurities and their defects have unpaired spins to create a magnetically ordered state. The magnetic properties of the non-magnetic metal atoms (Au or Al) adsorbed on impuritied nanosilicon surface were investigated, where the opening spin levels (OSL) effect in the localized states was obviously observed on nano-silicon doped with oxygen under the magnetic moment of these metal atoms. Here, the splitting gap of individual two-level spin +/- 1/2 states isolated in the localized states increases to order of 100 meV in the photovaltaic system consisting of the quantum dots or the quantum layers of silicon prepared by using pulsed laser in oxygen environment. It is interesting to make a comparison with the OSL effect in the localized states under the magnetic moment of magnetic metal Fe or Co adsorbed on nanosilicon surface in the detailed simulating calculations.
 

Publication name

 PHYSICA B-CONDENSED MATTER, 553 169-173; 10.1016/j.physb.2018.10.047 JAN 15 2019

Author(s)

 Huang, Zhong-Mei; Huang, Wei-Qi; Liu, Shi-Rong; Wu, Xue-Ke

Corresponding author(s) 

 HUANG Weiqi

 wqhuang@gzu.edu.cn

 Guizhou Univ, Inst Nanophoton Phys, Guiyang 550025, Guizhou, Peoples R China. 
 LIU Shirong 
 liushirong@vip.gyig.ac.cn

 Chinese Acad Sci, Inst Geochem, State Key Lab Environm Geochem, Guiyang 550003, Guizhou, Peoples R China.

View here for the details 

Copyright © Institute Of Geochemistry, Chinese Academy of Sciences All Rights Reserved.
Address: 99 West Lincheng Road, Guanshanhu District, Guiyang, Guizhou Province 550081, P.R.China
Tel: +86-851-85895239 Fax: +86-851-85895239 Email: web_en@mail.gyig.ac.cn