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Anomalous phase transition of Bi- doped Zn2GeO4 investigated by electrical conductivity and Raman spectroscopy under high pressure TEXT SIZE: A A A
We present a pressure-induced amorphization for pure and 0.5 mol. % Bi (3+) doped Zn2GeO4 samples, measured by high pressure Raman spectroscopy and high resolution transmission electron microscopy. Pressure-induced conductivity switching phenomena were discovered for both samples at around similar to 7.01 GPa and similar to 11.11 GPa, respectively, which closely correlated with the crystalline-to-amorphous transformation. The detailed conduction mechanism and the defect reaction process at high pressure indicate that the application of pressure could efficiently manipulate the microstructure and electrical performance of rare-earth doped polycrystalline materials, and therefore holds great promise for numerous applications in the future. Published by AIP Publishing.

Publication name

 JOURNAL OF APPLIED PHYSICS, 121 (12):10.1063/1.4979311 MAR 28 2017


 Wu, Lei; Dai, LiDong; Li, HePing; Hu, Haiying; Zhuang, YuKai; Liu, KaiXiang

Corresponding author(s) 

 DAI Lidong 
 Chinese Acad Sci, Inst Geochem, Key Lab High Temp & High Pressure Study Earths In, Guiyang 550002, Guizhou, Peoples R China. 

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