This report presents a pressure-induced permanent metallization for MoS2 under non-hydrostatic conditions. Impedance and Raman spectra were measured to study the pressure-induced structural and electronic transformations of MoS2 at up to similar to 25 GPa in diamond anvil cells under both non-hydrostatic and hydrostatic conditions. The results show evidence for isostructural hexagonal distortion from 2Hc to 2Ha and metallization at similar to 17 GPa and similar to 20 GPa under non-hydrostatic and hydrostatic conditions, respectively. Interestingly, the metallization is irreversible only under non-hydrostatic compression. We attribute this phenomenon to the incorporation of molecules of pressure medium between layers, which mitigate compressed stress and reduce interlayer interaction. Published by AIP Publishing. Publication name | APPLIED PHYSICS LETTERS, 110 (12):10.1063/1.4979143 MAR 20 2017 | Author(s) | Zhuang, YuKai; Dai, LiDong; Wu, Lei; Li, HePing; Hu, HaiYing; Liu, KaiXiang; Yang, LinFei; Pu, Chang | Corresponding author(s) | DAI Lidong dailidong_2014@hotmail.com Chinese Acad Sci, Inst Geochem, Key Lab High Temp & High Pressure Study Earths In, Guiyang 550081, Guizhou, Peoples R China. | View here for the details
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