Some bonds on the curved surface (CS) of silicon nanostructures can produce localized electron states in the band gap. Calculated results show that different curvature can form the characteristic electron states for some special bonding on nanosilicon surface, which are related to a series peaks in photoluminescience (PL), such as L-N, L-O1 and L-O2 lines in PL spectra due to Si-N, Si =O and Si-O-Si bonds on the curved surface, respectively. In the same way, Si Yb bond on the curved surface of Si nanostructures can manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as LYb line near 1550 nm in the electroluminescience (EL).

Publication name	ACTA PHYSICA SINICA, 63 (3):10.7498/aps.63.034201 MAR 2014
Author(s)	Huang Wei-Qi; Huang Zhong-Mei; Miao Xin-Jian; Yin Jun; Zhou Nian-Jie; Liu Shi-Rong; Qin Chao-Jian
Corresponding author	HUANG Weiqi  wqhuang@.gzu.edu.cn  Guizhou Univ, Coll Phys, Inst Nanophoton Phys, Guiyang 550025, Peoples R China.
Author(s) from IGCAS	LIU Shirong, QIN Chaojian

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