A new nanolaser concept using silicon quantum dots (QDs) is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional (2D) photonic crystal can be used to select the model in the nanolaser.

Publication name	CHINESE PHYSICS B　Volume: 21 　Issue: 6 　　Article Number: 064209　 Published: JUN 2012
Author(s)	Huang Wei-Qi; Chen Hang-Qiong; Shu Qin; Liu Shi-Rong; Qin Chao-Jian
Corresponding author	HUANG Weiqi  WQHuang2001@yahoo.com  Guizhou Univ, Key Lab Photoelectron Technol & Applicat, Inst Nanophoton Phys, Guiyang 550025, Peoples R China
Author(s) from IGCAS	LIU Shirong,　QIN Chaojian

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