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Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states TEXT SIZE: A A A

In the process of preparing nanosilicon, the crystallization process is an important part to influence and improve the efficiency of nanosilicon luminescence. Thermal annealing, laser annealing, and electron beam irradiation are different ways of crystallizing the nanosilicon. Different photoluminescence (PL) spectra and structures of nanocrystalline silicon are observed for different treatment time of crystallization. The experimental results show that choosing an appropriate crystallization method and parameters is very important for preparing the nanosilicon crystalline structures. High luminous efficiency can be obtained by controlling the parameters properly in the processes of preparing silicon quantum dots (QDs) and quantum surface, especially. It is discovered experimentally that better nanosilicon crystalline structure such as nanosilicon QD structure, better PL luminescence, and the doped localized state luminescence of nanocrystalline silicon can be obtained when the crystallization time is about 20 min. According to the nanosilicon crystallization process under thermal annealing, laser annealing and electron beam irradiation, a physical model of the effect of crystallization time on the nanosilicon localized state luminescence is established in this paper, which can explain the effect of crystallization time on the localized state luminescence of the nanosilicon.

Publication name

 ACTA PHYSICA SINICA, 65 (10):10.7498/aps.65.104202 MAY 20 2016

Author(s)

 Wu Xue-Ke; Huang Wei-Qi; Dong Tai-Ge; Wang Gang; Liu Shi-Rong; Qin Chao-Jie

Corresponding author 

 HUANG Weiqi
 sci.wqhuang@gzu.edu.cn
 Guizhou Univ, Inst Nanophoton Phys, Guiyang 550025, Peoples R China.

Author(s) from IGCAS   QIN Chaojie

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